single carrier levels – TechConnect Briefs

Neighbouring Levels Statistic and Shape of Quantum Dots: Si/Sio2

Filikhin I., Matinyan S.G., Vlahovic B., North Carolina Central University, US

We model the Si quantum dots (QDs) embedded into the SiO2 substrate. Single sub-band effective mass approach is used to calculate energy levels of electrons and heavy holes. For weak confinement regime (QD size D [...]

The INGAAS/GAAS Quantum Dots Under Effective and Ab Initio Treatments: Comparison and Results

Filikhin I., Suslov V.M., Vlahovic B., North Carolina Central University, US

An effective approach for describing the electronic structure of InGaAs/GaAs quantum dots (QDs) is presented. We model QDs based on a single sub-band approach with an energy dependent electron effective mass. The model assumes that [...]