silicon-germanium – TechConnect Briefs

A Physics-Based Empirical Model for Ge Self Diffusion in Silicon Germanium Alloys

Rabie M.A., Haddara Y.M., McMaster University, CA

We propose a physics-based model for the Ge diffusivity in SiGe and empirically fit the model to previously reported experimental results. The self-diffusivity of Ge can be given by: DGe=D0*exp(Sx)*exp(-E/kT) where x is the Ge [...]

Effect of Strain on the Oxidation Rate of Silicon Germanium Alloys

Rabie M.A., Gou S., Haddara Y.M., Knights A.P., Wojcik J., Mascher P., McMaster University, CA

We report on a series of experiments in which a strained Si0.95Ge0.05 layer 600Å thick was oxidized along with relaxed SiGe layers and Si samples. In this work, we observed that the oxidation rate of [...]

Modeling Germanium-Silicon Interdiffusion in Silicon Germanium/Silicon Super Lattice Structures

Hasanuzzaman M., Haddara Y.M., Knights A.P., McMaster University, CA

Intermixing at heterointerfaces and the broadening of the SiGe layer in SiGe/Si super-lattice (SL) structures can be detrimental to device performance. Thus it is important to develop predictive model for interdiffusion in SL structures. In [...]

Simulating IMD in SiGe HBTs: How good are our models?

Wong P., Pejcinovic B., Portland State University, US

Nominal transistor model parameters are found to be insufficient for reliably predicting intermodulation distortion (IMD) in heterojunction bipolar transistors. A method for optimizing the model parameters to give a more accurate simulation of IMD performance [...]