semiconductor – Page 3 – TechConnect Briefs

Predictive Process Simulation and Ab-initio Calculation of the Physical Volume of Electrons in Silicon

Windl W., Daw M.S., Ohio State University, US

Recently, we have presented the development of a complete predictive simulation capability for the effects of general anisotropic nonuniform stress on dopant diffusion in silicon [M. Laudon, N. N. Carlson, M. P. Masquelier, M. S. [...]

The Role of TCAD in Compact Modeling

Duane M., Applied Materials, US

This paper is an introduction to semiconductor process and device simulation and its role in compact modeling for circuit simulation. A brief history of TCAD is given. One use of TCAD is in the generation [...]

Predictive Process Simulation and Ab-initio Calculation of the Physical Volume of Electrons in Silicon

Windl W., Daw M.S., Ohio State University, US

Recently, we have presented the development of a complete predictive simulation capability for the effects of general anisotropic nonuniform stress on dopant diffusion in silicon [M. Laudon, N. N. Carlson, M. P. Masquelier, M. S. [...]

A New Approach for the Extraction of Threshold Voltage for MOSFET’s

Wong J.S., Ma J.G., Yeo K.S., Do M.A., Nanyang Technological University, SG

A new approach for the extraction of threshold voltage (Vth) is proposed, namely, the "Third Derivative of Drain-Source Current" method or simply "TD" method. This method extracts the Vth by finding the Vgs where the [...]

A Robust Algorithm for Predicting Freezeout and Exhaustion Under Equilibrium Conditions

Pieper R., Michael S., Naval Postgraduate School, US

A numerically robust method for evaluating the temperature-dependent carrier concentrations and related Fermi levels is proposed. The method is applicable to simple cases for which analytical solutions are available as well as more complex cases [...]