recessed-gate structure – TechConnect Briefs

Two-Dimensional Simulation of Surface-State Effects on Breakdown Characteristics of Narrowly-Recessed-Gate GaAs MESFETs

Mitani Y., Wakabayashi A., Horio K., Shibaura Institute of Technology, JP

Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It [...]