RDF – TechConnect Briefs

Impact of Channel Length and Gate Width of a N-MOSFET Device on the Threshold Voltage and its Fluctuations in Presence of Random Channel Dopants and Random Interface Trap: A 3D Ensemble Monte Carlo Stud

Ashraf N., Joshi S., Vasileska D., ASU, US

Previously we have reported threshold voltage fluctuations caused by presence of random distribution of dopant ions in the channel region of a 45 nm n-MOSFET and random single interface trap positioned from source to drain [...]

Modeling Small MOSFETs using Ensemble Devices

Watts J.S., Pino R., Trombley H., IBM, US

This paper discribes methodogy to correctly model small area MOSFETs including paremeter extraction and centering using multiple parallel devices for accurate measurments. The method includes adjusting the measured data to recover true single finger behavior, [...]