Random Work Function Induced DC Characteristic Fluctuation in 16-nm High-k/Metal Gate Bulk and SOI FinFETs
Su H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Cheng H-W, Chang H-T, Li Yiming, National Chiao Tung University, TW
This work studies the metal gate’s work function fluctuation induced DC characteristic fluctuation in the 16-nm bulk and silicon-on-insulator (SOI) fin-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. The method [...]