quantum mechanical effects – TechConnect Briefs

A Compact Physical Model for Critical Quantum Mechanical Effects On MOSFET

Wang L., Meindl J.D., Georgia Institute of Technology, US

As the MOSFET is scaled down to sub-100nm range, two quantum mechanical effects (QME) of the energy quantization and the electron tunneling though the gate oxide become critical. A new compact physical model for QME [...]