PL – TechConnect Briefs

Growth and optical properties of high-density InN nanodots

Ke W.C., Lee S.J., Lee T.C., Kao C.Y., Chen W.K., Cheng Y.C., Chou W.C., Chang W.H., Lin J.C., Lin W.J., Cheng Y.C., Lee S.J., Lee T.C., Lin J.C., Lin W.J., Yuan Ze University, TW

High density InN/GaN nanodots were successfully grown by pulsed mode (PM) metal organic chemical vapor deposition (MOCVD). InN nanodots density of up to ~5×1010 cm-2 at a growth temperature of 550 ℃ was achieved The [...]

Interpretation of Anomalous Photoluminescence Peak in GaAs1-xNx Grown by Molecular Beam Epitaxy

Fan W.J., Cheah W.K., Yoon S.F., Zhang D.H., Liu R., Wee A.T.S., Nanyang Technological University, SG

Low-temperature (10K) photoluminescence (PL) measurements of GaAs1-xNx epitaxial layers grown on GaAs by solid-source molecular beam epitaxy (SSMBE) reveal an anomalous second peak. Rapid thermal annealing (RTA) of a specific GaAsN sample reveals a lower [...]

Photoluminescence and Photoluminescence Excitation Measurements of Eu-Doped Nano-Si/SiO2 Thin Films

Nery G.A., Fonseca L.F., Liu H., Resto O., Weisz S.Z., University of Puerto Rico at Rio Piedras, PR

Europium (Eu) ions are already used in significant visual technological applications. We attempted to determine if a silicon nanoparticle (nano-Si) / Europium interaction could occur. The energy transfer from nano-Si to rare earth ions has [...]