Castellated-Gate MOSFETs as Power Transistors for Nanometer CMOS and Post-CMOS Integrated Nanosystems
Analysis of the constant-voltage scaling characteristics of Fully-Depleted Castellated Gate (FDCG) MOSFETs reveals near term opportunities for these devices as the replacement for the “thick oxide” I/O device in CMOS System-On-A-Chip (SoC) technologies (e.g. the [...]