parameter – TechConnect Briefs

An Accurate and Versatile ED- and LD-MOS Model for High-Voltage CMOS IC Spice Simulation

Tudor B., Wang J.W., Hu B.P., Liu W., Lee F., Synopsys, Inc., US

The paper presents a high-voltage compact MOSFET model that has been proven physically accurate and numerically robust for various and generations of high-voltage ED (extended drain) and LD (laterally double diffused) production CMOS process technologies. [...]

Parameter Preserving Model Order Reduction of a Flow Meter

Moosmann C., Rudnyi E.B., Greiner A., Korvink J.G., Hornung M., IMTEK, University of Freiburg, DE

Model order reduction is known to work reliably for MEMS simulations and can beused to speed up transient and harmonic computations tremendously. However, using standard model reduction techniques the generated reduced models are only able [...]