Simulation Of Point Defect Clustering In Cz-Silicon Wafers On The Cray T3E Scalable Parallel Computer: Application To Oxygen Precipitation
The oxygen precipitation in high purity CZ-silicon for ULSI is investigated with regard to the LO-HI and HI-LO-HI annealing processes used for denuded zone formation. The precipitation can be treated as a stochastic phenomenon and [...]