orientation-dependent wet chemical etching

Simulation of Orientation-Dependent Etching of Silicon Using a New Step Flow Model of 3D Structuring

Horn A., Schröder H., Obermeier E., Wachutka G., Münich University of Technology, DE

We present a new model of three-dimensional orientation-dependent etching of Si{100}. Recent experimental results suggest to conceive etching as a “peeling” process of terraced planes, leading to the concept of a “step flow model of [...]