On Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-Traps
Li Y., Su H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Cheng H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Chang H-T, National Chiao Tung University, TW
Abstract – In this work, we statistically study characteristic fluctuation of 16-nm-gate high-/metal gate (HKMG) MOSFETs by random-discrete-dopants (RDDs) inside silicon channel and random-interface-traps (RITs) at high-k/silicon interface. Randomly generated devices with three-dimensional (3D) RDDs [...]