MBE – TechConnect Briefs

Effect of surface reconstruction on the growth of self-assembled Ag nanostructures on Si(111) surfaces

Goswami D.K., Indian Institute of Technology Guwahati, IN

In this work, we have shown that how buried interface structure of Si(111) surface influence the growth of Ag nanostructure growth. Electronic growth modes for Ag on Si(111)-7x7 surface can only be observed if the [...]

Synthesis and Characterization of ZnO Nanorods using Molecular Beam Epitaxy

Asghar M., Ali A., Hasan M.-A., Yasin Akhtar Raja M., Islamia University of Bahawalpur, PK

ZnO nanorods stand out as one of the most important candidates for next generation opto- and nano electronics. Synthesis of high quality and stable ZnO nanorods remains a challenge thus far. Similarly fabrication of thermally [...]

Interpretation of Anomalous Photoluminescence Peak in GaAs1-xNx Grown by Molecular Beam Epitaxy

Fan W.J., Cheah W.K., Yoon S.F., Zhang D.H., Liu R., Wee A.T.S., Nanyang Technological University, SG

Low-temperature (10K) photoluminescence (PL) measurements of GaAs1-xNx epitaxial layers grown on GaAs by solid-source molecular beam epitaxy (SSMBE) reveal an anomalous second peak. Rapid thermal annealing (RTA) of a specific GaAsN sample reveals a lower [...]

Optical Characteristics of InAs Quantum Dots influenced by AlGaAs/GaAs Superlattice Barriers

Choi H., Jeong Y., Park Y., Lee J., Leem J-Y, Leem J-Y, Jeon M., Jeong Y., Inje University, KR

We investigated the effect of AlGaAs/GaAs superlattice barriers on the optical properties of InAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. The samples used in the present work were grown by molecular beam epitaxy [...]