iv-characteristic – TechConnect Briefs

An Improved MOS Transistor Model with an Integrated Mobility Model

Hauser J.R., N.C. State University, US

A new and improved MOS I-V model will be presented using a more exact approach to include surface field dependent mobility effects. Mobility degradation effects are included in the basic I-V differential equation as opposed [...]

Current Collapse in Tunnelling Transport through Benzene

Hettler M., Wenzel W., Wegewijs M., Schoeller H., Forschungszentrum Karlsruhe, DE

Single molecule electronic devices offer exciting perspectives for further minituarization of electronic circuits with a potentially large impact in applications. Several experiments have demonstrated the possibility to attach individual molecules to leads and to measure [...]