independent double gate – TechConnect Briefs

Analytical Potential Distribution Model for Underlap Double Gate MOSFETs with 3T-4T and Symmetric- Asymmetric Options for Subthreshold operation: A Conformal Mapping Approach

Vaddi R., Dasgupta S., Agarwal R.P., Indian Institute of Technology, Roorkee, IN

We propose a new analytical model to compute the potential distribution in gate overlap and underlap regions of a 3T- 4T double gate MOSFET valid for symmetric, asymmetric options for operation in the subthreshold condition. [...]