High-k material – TechConnect Briefs

Comprehensive Examination of Threshold Voltage Fluctuations in Nanoscale Planar MOSFET and Bulk FinFET Devices

Hwang C-H, Cheng H-W, Yeh T-C, Li T-Y, Li Y., Huang H.M., Li T-Y, Li Y., National Chiao Tung University, TW

Impact of the intrinsic fluctuations on device characteristics, such as the threshold voltage (Vth) fluctuation is crucial in determining the behavior of nanoscale semiconductor devices. The fluctuations are pronounced for continuously shrunk CMOS devices. To [...]

A Compact Physical Model for Critical Quantum Mechanical Effects On MOSFET

Wang L., Meindl J.D., Georgia Institute of Technology, US

As the MOSFET is scaled down to sub-100nm range, two quantum mechanical effects (QME) of the energy quantization and the electron tunneling though the gate oxide become critical. A new compact physical model for QME [...]