heavy doping – TechConnect Briefs

MEMS Simulation in Heavily Doped Silicon Devices

Matsuda K., Kanda Y., Naruto University of Education, US

Simulation of the semiconductor transport under heavily doped and stressed conditions is presented. The degenerate statistics are introduced by taking into account the density-of-state functions for the band tail and the impurity band. The momentum-dependent [...]

Simulation of the Piezo-Tunnel Effect

Friedrich A.P., Besse P.A., Bächtold M., Popovic R.S., Swiss Federal Institute of Technology of Lausanne, CH

We present a new model of the piezo-tunnel effect in a heavily doped silicon p-n junction. Our approach is based on the coupling of a strain-dependent description of the energy exterma in the valence and [...]