GaN – Page 3 – TechConnect Briefs

Self-Heating Effects in GaN/AlGaN Heterostructure Field-Effect Transistors and Device Structure Optimization

Filippov K.A., Balandin A.A., University of California Riverside, US

In this paper we present results of our simulation of temperature rise in GaN/AlGaN HFETs characterized by different geometry, layered structure, doping density and substrate type. We do note make simplifying assumptions of the uniform [...]

Simulation of Heterojunction Bipolar Transistor with Domain Decomposition Method

Zhang Y., Ruden P.P., Oklahoma State University, US

Domain decomposition method is used in simulation of the band profile and the majority carrier concentration profile of AlGaN/GaN heterojunction bipolar transistors. The method is very stable and efficient. With this method different device structures [...]

Squeezed Electrons in GaN Quantum Wells

Ridley B.K., Zakhleniuk N.A., Bennett C.R., University of Essex, UK

We present an analytic theory of hot-electron transport in a GaN quantum well containing a large-enough electron concentration for strong electron-electron scattering to establish a drifted distribution. Novel behaviour includes the squeezed electron distribution and [...]