Modifications of graphitic C3N4 with multi-metal oxides for enhanced visible-light active photocatalysis
Bulk graphitic C3N4 (g-C3N4) is a p-type semiconductor with band gap of 2.7 eV. For photocatalytic water splitting, valance and conduction band gap positions of g-C3N4 sandwich both oxygen and hydrogen evolution potentials, making g-C3N4 [...]