Analytical Solutions for Long-Wide-Channel Thick-Base MOS Transistors I. Effects of Remote Boundary Conditions and Body Contacts
Analytical solutions and computed characteristics for long-wide-channel thick-base MOS transistors are reported. The second generation industrial-consensus surface potential approach is used. Decomposition of the 2-Dimensional transistor problem into two 1-D problems follows the 1966-Pao-Sah current- [...]