effect of random dopant – TechConnect Briefs

Random Discrete Dopant Fluctuated Sub-32 nm FinFET Devices

Li Y., Hwang C-H, Yu S-M., Huang H.M., Chen H-M, National Chaio Tung University, TW

Scaling of silicon production technology has approached the sub-65nm regime. Device’s electrical characteristics fluctuate according to the discreteness and randomness of dopants in sub-32nm technologies. In this paper, we investigate the random-dopant-induced electrical characteristics fluctuations, [...]