Analytic Compact Model of Ballistic and Quasi-ballistic Cylindrical Gate-All-Around MOSFET Incorporating Drain-Induced Barrier Lowering Effect
Gate-All-Around metal-oxide-semiconductor field effect transistors (GAA-MOSFETs) have been attracting ever-increasing attention. The numerical calculations including quantum mechanical effect and ballistic transport of drain current can be evaluated quite accurately. However, it takes an immense amount [...]