DG SOI – TechConnect Briefs

Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack

Dutton R.W., Choi C-H, Stanford University, US

Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leady MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on [...]

Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack

Dutton R., Choi C-H, Stanford University, US