charge partition – TechConnect Briefs

Charge Partition in Lateral Nonuniformly-Doped Transistor

Zhang J., Zhou X., Zhu G., Lin S., Nanyang Technological University, SG

In this work, we aim to model the LDMOS capacitance behavior of the core channel. In order to simplify the problem, the diffused doping profile in the core channel is approximated as a step profile. [...]

Analysis and Modeling of NQS Effects in MOSFET’s

Ma Y., Jeng M-C, Liang H., Liu Z., Cadence Design Systems, Inc., US

Three issues regarding NQS effect in MOSFET’s are investigated: When NQS effect becomes significant, NQS effect on channel charge partition, and its implementation in advanced MOSFET models (PSP, Hisim2 and Bsim4).Channel segmentation method [1] with [...]