asymmetric – TechConnect Briefs

Analytic potential model for asymmetricunderlap gate-all-around MOSFET

Wang S., Peking University, CN

An analytic potential model for undoped cylindrical gate-all-around (GAA) MOSFET with asymmetric gate underlap is developed in this paper. This model is derived by solving the Poisson’s equation with the parabolic potential approximation, channel length [...]

A Unified View of Drain Current Models for Undoped Double-Gate SOI MOSFETs

Ortiz-Conde A., García-Sánchez F.J., Simón Bolívar University, VE

In this paper we discuss the compact modeling framework for undoped double-gate SOI MOSFETs. Core compact models, including the analysis for surface potential and drain current for various device structures are discussed and compared. Then, [...]