3C-SiC – TechConnect Briefs

Single-crystalline 3C-SiC thin-film on large Si substrate for photonic applications

Massoubre D., Wang L., Chai J., Walker G., Hold L., Lobino M., Dimitriev S., Iacopi A., Griffith University, AU

We present our recent progress in the hetero-epitaxial growth of single-crystalline cubic silicon carbide (3C-SiC) on large silicon (Si) wafer and its use for photonic applications. Single-crystalline 3C-SiC thin-film on Si opens new opportunities to [...]

Mechanical Properties of Polycrystalline 3C-SiC Heteroepitaxial Layers

Pozzi M., Harris A.J., Burdess J.S., Lee K.K., Cheung R., Newcastle University, UK

Silicon carbide (SiC) is widely recognised as the leading candidate to replace silicon in Micro Electro-Mechanical Systems (MEMS) devices operating in harsh environments. The superiority of SiC over Si as regards mechanical, chemical and electronic [...]

Growth of 3C-SiC Nanowires on Nickel Coated Si(100) Substrate using Dichloromethylvinylsilane and Diethylmethylsilane by MOCVD Method

Kang B.-C., Hyun J.S., Boo J.-H., Sungkyunkwan University, KR

3C-SiC nanowires have been deposited on nickel coated Si(100) substrates using single source precursors by thermal metal-organic chemical vapor deposition (MOCVD) method. Dichloromethylvinylsilane (CH2CHSiC(CH3)Cl2) and diethylmethylsilane (CH3 SiH(C2H5)2) were used as a single precursor without [...]