Wan C.C. – TechConnect Briefs

A New Copper Electrodeposition Scheme to Reduce Void Defects after Chemical Mechanical Polishing

Lin J.Y., Wang Y.Y., Wan C.C., Wang Y.Y., National Tsing Hua University, TW

Deposition of highly (111) oriented conductive layer is required for achieving better electromigration resistance and lower resistivity. Moreover, the amount of void defects decreases as the (111)/(200) ratio increases in CMP process. Hence, we investigated [...]

Investigation of the Behaviors of Various Electroplated Copper films during CMP

Feng H.P., Cheng M.Y., Wang Y.Y., Wan C.C., Wang Y.Y., National Tsing Hua University, TW

The behaviors of various electroplated copper films during CMP are important for removal mechanism and defect generation. This article was to study the characteristics of various copper films during CMP, including impurity effect and current [...]