Tian L. – TechConnect Briefs

Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects

Yu Z., Zhang D., Tian L., Tsinghua University, CN

As the channel length of MOSFETs is shrunk to below 50 nm, 2D quantum mechanical (QM) e®ects becomes profound on both the carrier con¯nement in the transverse direction to the channel and the carrier transport, [...]

A Compact I-V Model for FinFETs Comprising Multi-Dimensional Electrostatics and Quantum Mechanical Effects

Zhang D., Yu Z., Tian L., Tsinghua University, CN

A compact I-V model for FinFET using ballistic transport with 1D electron gas is presented. The 2D electrostatics and 2D quantum mechanical (QM) effects at the cross-section are fully taken into account, which ensures the [...]

Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects

Yu Z., Zhang D., Tian L., Tsinghua University, CN

As the channel length of MOSFETs is shrunk to below 50 nm, 2D quantum mechanical (QM) e®ects becomes profound on both the carrier con¯nement in the transverse direction to the channel and the carrier transport, [...]