MOS Structures Containing Amorphous Silicon Nanoparticles for Application in Memory Devices
Nedev N., Stoytcheva M., Nesheva D., Manolov E., Brüggemann R., Levi Z., Zlatev R., Valdez B., Alvarez L., Universidad Autónoma de Baja California, MX
Metal-Oxide-Silicon structures containing a layer with amorphous silicon nanoparticles in a silicon oxide matrix are fabricated by sequential physical vapour deposition of SiOx (x=1.15) and RF sputtering of SiO2 on n-type crystalline silicon, followed by [...]