Compact Iterative Field Effect Transistor Model
Shur M.S., Turin V., Veksler D., Ytterdal T., Iñiguez B., Jackson W., Rensselaer Polytechnic Institute, US
Compact models for field effect transistors should satisfy two conflicting requirements. On one hand, they should be simple enough and should contain a small number of physics-based parameters to be suitable for parameter extraction. On [...]