Onodera H. – TechConnect Briefs

Analysis of Breakdown Characteristics in Gate and Source Field-Plate AlGaN/GaN HEMTs

Onodera H., Hanawa H., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great attention because of their applications to high-power microwave devices. It is known that the introduction of field plate enhances the power performance of AlGaN/GaN HEMTs, because the off-state breakdown [...]

Simulation of Back-Electrode Effects on Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs

Horio K., Onodera H., Fukai T., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of gate-field-plate AlGaN/GaN high electron mobility transistors with a backside electrode is performed by considering a deep donor and a deep acceptor in a buffer layer. Effects of introducing a field plate [...]

Structural Stability of Hydrogen Storage Materials

Katagiri M., Onodera H., Ogawa H., National Institute for Materials Science, JP

Elastic instability by hydrogenation and hydrogen diffusion are studied by molecular dynamics method. The bulk modulus instability causes the anorphization by hydrogenation. The atomic relaxation reduces the pressure fluctuation terms i n the elastic constant, [...]

Computer Simulation of Hydrogen Storage Materials

Katagiri M., Onodera H., Ogawa H., National Institute for Materials Science, JP

We develope a new software to design the hydrogen storage materials. The energetic and dynamical behavior of the materials are studied. As an example, we illustrate the amorphization process of intermetallics by hydrogenation, i.e. hydrogen [...]