Niessner M. – TechConnect Briefs

Combined Device- and System-level Simulation of RF MEMS Switches

Schrag G., Künzig T., Niessner M., Wachutka G., Technical University of Münich, DE

We present two problem-adapted, tailored modeling approaches for RF-MEMS switches which, in principle, are applicable to any capacitive MEMS device. They are based on finite element analysis (FEA) combined with analytical, lumped-element, and reduced-order modeling [...]

Squeeze-Film Damping in Perforated Microstructures: Modeling, Simulation and Pressure-Dependent Experimental Validation

Niessner M., Schrag G., Iannacci J., Wachutka G., Münich University of Technology, DE

The reliable estimation of squeeze-film damping (SQFD) is a prerequisite for the design of many microelectromechanical systems (MEMS). The proper operation of several MEMS devices (e.g. accelerometers) often depends crucially on the damping forces, i.e. [...]

Electromechanical and Electromagnetic Simulation of RF-MEMS Complex Networks Based on Compact Modeling Approach

Iannacci J., Faes A., Kuenzig T., Niessner M., Wachutka G., Fondazione Bruno Kessler - FBK, IT

RF-MEMS, i.e. MicroElectroMechanical-Systems for Radio Frequency applications, have been attracting the interest of the scientific community for more than one decade, thanks to their high performance and large reconfigurability. The employment of RF-MEMS based devices [...]

Automatically Generated and Experimentally Validated System-Level Model of a Microelectromechanical RF Switch

Niessner M., Schrag G., Wachutka G., Iannacci J., Margesin B., Münich University of Technology, DE

In this work, we present a mixed-level model of an electrostatically actuated and viscously damped ohmic radio frequency (RF) microelectromechanical switch, which provides an accurate physical description of the device behavior and is suitable for [...]