Deposition of beta-SiC thin films on Si (100) substrates by MOCVD method for NSOM applications
Silicon carbide thin films were deposited on Si(100) substrates by metal-organic chemical vapor deposition(MOCVD) in high vacuum condition(2.010-7 Torr) using 1,3-disilabutane as a single source precursor which contains silicon and carbide in 1:1 ratio at [...]