Gate Current Partitioning in MOSFET Models for Circuit Simulation
Ngo Q., Navarro D., Mizoguchi T., Hosakawa S., Ueno H., Miura-Mattausch M., Yang C.Y., Santa Clara University, US
Gate current plays a critical role in circuits featuring sub-100nm MOSFETs. This paper elucidates the importance of gate current partitioning for accurate circuit simulation. Past publications have presented gate current models based on surface potential [...]