McAndrew C.C. – TechConnect Briefs

Analysis of Halo Implanted MOSFETs

McAndrew C.C., Drennan P.G., Freescale Semiconductor, US

MOSFETs with heavily doped regions at one or both ends of the channel exhibit some quantitative differences in electrical behavior compared to devices with laterally unform channel doping. These can include a peakiness to the [...]

DC and AC Symmetry Tests for MOSFET Models

McAndrew C.C., Freescale Semiconductor, US

Symmetry around Vds=0 is a critical requirement forMOSFET models, e.g. as it affects the ability of a model tosimulate accurately distortion for some RF CMOS mixers.The Gummel Symmetry Test is, until now, the standardtest used [...]

Device Correlation: Modeling using Uncorrelated Parameters, Characterization Using Ratios and Differences

McAndrew C.C., Drennan P.G., Freescale Semiconductor, US

Partial correlations between parameters of different types of devices, such as effective channel lengthfor PMOS and NMOS devices, are often modeled and simulated statistically via correlation coefficients.However this is cumbersome and inefficient from a modeling [...]