Lou H. – TechConnect Briefs

Nonparabolicity Effects of the Ultra-thin Body Double-gate MOSFETs

Lou H., Peking University, CN

In this paper, the band-structure of ultra-thin body (UTB) double-gate (DG) MOSFETs is calculated by empirical tight-binding model, and the the nonparabolicity effects are included in the model by the modified Schrödinger equation with the [...]

An Analytic Terahertz Signal Detection Model of Silicon-based Nanowire Gated Field Effect Transistor

He F., Chen Y., Mu X., Lou H., Zhang L., Song Y., SZPKU, CN

In this paper, an analytical terahertz (THz) signal detection model of Silicon-based nanowire MOSFET (NWFET) is proposed. Beginning from the fundamental hydrodynamic transport equations, the expressions of the velocity spatial distribution and inversion charge transport [...]