López-González J.M – TechConnect Briefs

Numerical Modeling for Comparison of Emitter-Base Designs of InGaP/GaAs Heterojunction Bipolar Transistors

, Universitat Politecnica de Catalunya, ES

In this work it is investigated the consequences of the design of the emitter pedestal in the electric DC and AC performance of GaInP/GaAs HBTs using numerical modeling TCAD tool. Two different HBTs are studied [...]

Three-Dimensional Simulation of AlxGa1-xAs/GaAs Gradual Heterojunction Bipolar Transistor

García-Loureiro A.J., Pena T.F., Prat Viñas Ll., Univ. Santiago de Compostela, ES

In this work we present the results of the simulation of AlxGa1-xAs/GaAs gradual heterojunction bipolar transistor using a parallel three-dimensional semiconductor device simulator. This simulator is based on drift-diffusion transport model. In order to solve [...]

Parallel Domain Decomposition Applied to 3D Poisson Equation for Gradual HBT

García-Loureiro A.J., Pena T.F., López-González J.M, Prat Viñas Ll., Univ. Santiago de Compostela, ES

This paper presents the implementation of a parallel solver for the 3D Poisson equation applied to gradual HBT simulation in a memory distributed multiprocessor. The Poisson equation was discretized using a finite element method (FEM) [...]