Kondo M. – TechConnect Briefs

Analysis of Breakdown Characteristics in Field-Plate AlGaN/GaN HEMTs: Dependence on Deep-Acceptor Density in Buffer Layer

Akiyama S., Kondo M., Wada L., Horio K., Shibaura Institute of Technology, JP

We make a two-dimensional analysis of field-plate AlGaN/GaN HEMTs with a Fe-doped semi-insulating buffer layer, and studied how the deep-acceptor density in the buffer layer NDA and the field-plate length LFP affect the breakdown voltage [...]

A Novel Method to Maintain Alignment Accuracy in Bonding Process Utilizing Resin as an Adhesive Material

Lee S.S., Kondo M., Ishibashi R., Kinoshita K., Kishida S., Tottori University, JP

In this paper we have firstly reported that a novel method to maintain alignment accuracy in wafer bonding process utilizing resin as an adhesive material. We have proposed tentatively localized bonding method with 1100 nm [...]