Modeling and Fabrication of Quantum Dot Channel (QDC) Field-Effect Transistors Incorporating Quantum Dot Gate
Quantum dot gate (QDG) field effect transistors (FET) have shown three-state transfer characteristics. Quantum dot channel (QDC) field-effect transistors (FET) have exhibited multi-state ID-VG characteristics. This paper aims at studying the effect of incorporating cladded [...]