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HomeAuthorsKobayashi K.

Authors: Kobayashi K.

Development of the Electro-Friction Effect in the Semiconductor Particles / Thermoplastic Resin Composite Film

Fuwa T., Su H., Yanaka R., Takase R., Kobayashi K., Kawai T., Sakurai K., Anzai H., Kuroda S., Gunma University, JP
Electro-Rheological (ER) fluid is the suspension of polarizable particles in an insulating solvent and has the characteristic that the apparent viscoelasticity changes when an electric field is applied from the outside. This phenomenon is caused [...]

Detecting Defects over the Whole Surface of Wafer by Non-destructive and Non-contact Pulse Photoconductivity Method (PPCM)

Ndagijimana J., Soh Y., Kubota H., Kobayashi K., Kumamoto University, JP
With the miniaturization of CMOS, the gate insulator has extremely become thin until reaching the EOT (equivalent oxide thickness) of less than 1nm in order to keep maintaining high-speed performances of devices and low electric [...]

Computing Metallofullerenes as Agents of Nanoscience: Gibbs Energy Treatment of Ca@C72, Ca@C82, and La@C82

Slanina Z., Kobayashi K., Nagase S., Institute for Molecular Science, JP
Various endohedral cage compounds have been suggested as possible candidate species for molecular memories. One approach is built on endohedral species with two possible location sites of the encapsulated atom while another concept of quantum [...]

Excited Electronic States and Production Optimizations for Promising Nano-Agents

Slanina Z., Kobayashi K., Nagase S., Academia Sinica, TW
Very high temperatures of fullerene and nanotube syntheses do allow for a significant population of excited electronic states and thus for non-negligible electronic partition functions. This unique feature can have some interesting consequences for computed [...]

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