Klimeck G. – TechConnect Briefs

Investigation of the Conductance of Silicon Nanowire Biosensors Using the 2D Drift-diffusion Model

Damodaran S., Vadivelmurugan S., Do Q.T., Heitzinger C., Liu Y., Klimeck G., Purdue University, US

DNA-FETs are DNA sensors consisting of a semiconductor transducer and a functionalized surface. Their device structure is similar to a MOSFET, but the gate has been replaced by the functionalized surface. Since DNA-FETs allow direct [...]

Atomistic Simulations in Nanostructures Composed of Tens of Millions of Atoms: Importance of long-range Strain Effects in Quantum Dots

Korkusinski M., Klimeck G., Xu H., Lee S., Goasguen S., Saied F., Purdue University, US

Realistic calculations of propertioes of nanostructures begin with the determination of equilibrium positions of constituent atoms. The nanoelectronic modeling tool NEMO-3D determines these positions by minimizing the total elastic energy. The displacements are further used [...]

Study of Alloy Disorder in Quantum Dots through Multi-million Atom Simulations

Klimeck G., Oyafuso F., Boykin T.B., Bowen R.C., von Allmen P., NASA, Jet Propulsion Laboratory, US

A tight binding model which includes s, p, d and s* orbitals is used to examine the electronic structures of an ensemble of dome-shaped In0.6Ga0.4As quantum dots. Given ensembles of identically sized quantum dots, variations [...]