Itagaki K. – TechConnect Briefs

Simulation of Field-Plate Effects on Surface-State-Related Lag and Current Slump in GaAs FETs

Tanaka T., Itagaki K., Nakajima A., Horio K., Shibaura Institute of Technology, JP

In this study, we carry out two-dimensional transient analysis of field-plate GaAs MESFETs by taking surface states into account. Quasi-pulsed current-voltage curves are derived from the transient characteristics. We show that drain lag and current [...]

Simulation of Decrease in Lag phenomena and Current Slump of Field-Plate GaAs FETs

Itagaki K., Ueda H., Terao Y., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which a deep donor “EL2” and a shallow acceptor are considered in a semi-insulating substrate, and the results are compared between the two cases with [...]

Simulation of Field-Plate Effects on Lag and Current Collapse in GaN-based FETs

Itagaki K., Nakajima A., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analyses of field-plate GaN MESFETs and AlGaN/GaN HEMTs with a semi-insulating buffer layer have been performed in which a deep donor and a deep acceptor are considered in the buffer layer. Quasi-pulsed I-V [...]

Numerical Simulation of Drain-Current Transients and Current Compression in GaN MESFETs

Takayanagi H., Itagaki K., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analyses of GaN metal-semiconductor field effect transistors (MESFETs) are performed in which a three level compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a [...]