Ismail R. – TechConnect Briefs

Numerical Study of Carrier Velocity for P-type Strained Silicon MOSFET

Heong Y.W., Ahmadi M.T., Suseno J.E., Ismail R., Universiti Teknologi Malaysia, MY

Abstract In this paper, a numerical study of carrier concentration for P-type strained Silicon MOS is presented. Density of state proportion of Fermi-Dirac intergral that covers the carrier statistics to all degenerate level is studied [...]

MOSFET-Like Carbon Nanotube Field Effect Transistor model

Ahmadi M.T., Heong Y.W., Ismail R., University Technology Malaysia, MY

An analytical model that captures the essence of physical processes in a CNTFET’s is presented. The model covers seamlessly the whole range of transport from drift-diffusion to ballistic. It has been clarified that the intrinsic [...]