HiSIM- Replacement of BSIM4 in UDSM Circuit Simulations
This paper presents HiSIM speed and convergence advantage against BSIM4 and PSP on a large variety of circuits such as memories, MPUs, PLLs, A/D and D/A converters, mixers etc.
Authors: Iino Y.
HiSIM-1.2: The Effective Gate Length Validation with the Capacitance Data
HiSIM-1.2 model parameter extraction and the resulted fit for the current voltage characteristics were reported at WCM-2004 (Boston, MA, 2004). The measurement curves were reproduced well. However, the Cgc (the gate to the shorted source/drain) [...]
A Trial Report: HiSIM-1.2 Parameter Extraction for 90 nm Technology
This paper reports HiSIM-1.2 Spice model parameter extraction for a practical 90 nm technology devices. The extraction sequence with the measurement data will be exhibitted. The number of optimized HiSIM parameters were only 19 out [...]