Gorup Z. – TechConnect Briefs

Tunneling-Assisted Currents in n+p+ Amorphous Silicon Junctions

Furlan J., Gorup Z., University of Ljubljana, SI

A theoretical model for the tunneling transport of charge carriers in forward-biased heavily doped amorphous silicon pn junctions was recently presented. In this paper, in addition to current-voltage characteristics in the forward direction, reverse-voltage characteristics [...]

Modelling High Built-In Electric Field Effects on Generation-Recombination Rates in Space-Charge Regions of pn a-Si:H Junctions

Furlan J., Gorup Z., Smole F., Topic M., University of Ljublijana, SI

A theoretical model of lateral transport of charge carriers in pn a-Si:H junctions with high built-in electric fields is proposed in which the transport of carriers is treated in a similar way to capture-emission transitions [...]