García-Sánchez F.J. – TechConnect Briefs

A Computationally Efficient Method for Evaluating Distortion in DG MOSFETs

Salazar R., Ortiz-Conde A., García-Sánchez F.J., Solid State Electronics Laboratory, VE

In this paper we have generalized the correlation between Integral Nonlinearity Function (INLF) and Total Harmonic Distortion (THD) of independently driven double -gate (IDDG) MOSFETs.

A Unified View of Drain Current Models for Undoped Double-Gate SOI MOSFETs

Ortiz-Conde A., García-Sánchez F.J., Simón Bolívar University, VE

In this paper we discuss the compact modeling framework for undoped double-gate SOI MOSFETs. Core compact models, including the analysis for surface potential and drain current for various device structures are discussed and compared. Then, [...]

Analytic Solution for the Drain Current of Undoped Symmetric Dual-Gate MOSFET

Ortiz-Conde A., García-Sánchez F.J., Malobabic S., Muci J., Universidad Simón Bolívar, VE

A potential-based drain current model is presented for nanoscale undoped-body symmetric double gate MOSFETs. It is based on a fully coherent physical description and consists of a single analytic equation that includes both drift and [...]