Interpretation of Anomalous Photoluminescence Peak in GaAs1-xNx Grown by Molecular Beam Epitaxy
Fan W.J., Cheah W.K., Yoon S.F., Zhang D.H., Liu R., Wee A.T.S., Nanyang Technological University, SG
Low-temperature (10K) photoluminescence (PL) measurements of GaAs1-xNx epitaxial layers grown on GaAs by solid-source molecular beam epitaxy (SSMBE) reveal an anomalous second peak. Rapid thermal annealing (RTA) of a specific GaAsN sample reveals a lower [...]