Metal-Oxide-Semiconductor Structures with Two and Three-Region Gate Dielectric Containing Silicon Nanocrystals: Structural, Infrared and Electrical Properties
Mateos D., Arias A., Nedev N., Curiel M., Dzhurkov V., Manolov E., Nesheva D., Contreras O., Valdez B., Bineva I., Raymond O., Siqueiros J.M., Autonomous University of Baja California, MX
MOS structures with two and three-region gate dielectrics containing Si nanocrystals are prepared and characterized by TEM, IR spectroscopy and electrical measurements. c Si/SiO2 containing Si NCs/SiO2/Al structures were obtained by high temperature annealing of [...]