Fabrication of highly ordered vertical GaAs nanowires by inductively coupled plasma etching and their modal analysis
Dhindsa N., Chia A., Boulanger J., Khodadad I., LaPierre R., Walia J., Saini S., University of Waterloo, CA
We present highly ordered vertical gallium arsenide (GaAs) nanowires fabricated by dry etching using various metal mask combinations. A great control on the length, diameter, pitch and facet tapering of the nanowires was achieved. Diameters [...]